"Si̍t" siû-thin kiên ke chhâ-phe̍t
刪去的內容 新增的內容
無編輯摘要 |
無編輯摘要 |
||
Thi 1 hàng:
{{Infobox element
|name=Si̍t
|enname=silicon
|alt name=
|number=14
|symbol=Si
|appearance=crystalline, reflective with bluish-tinged faces
|image name=SiliconCroda.jpg
|image size=
|image name comment=
|image name 2=Silicon Spectra.jpg
|image name 2 comment=Spectral lines of silicon
|left=[[Lî]]
|right=[[Lìn]]
|above=[[Than|C]]
|below=[[germanium|Ge]]
|series=lui-kîm-su̍k
|series comment=
|group=14
|period=3
|block=p
|series color=
|atomic mass=28.085
|atomic mass ref=<ref name="CIAAW">[http://www.ciaaw.org/pubs/TSAW2013_xls.xls Conventional Atomic Weights 2013]. [[Commission on Isotopic Abundances and Atomic Weights]]</ref>
|atomic mass 2=
|atomic mass comment=(28.084–28.086)<ref name="IUPAC">[http://www.ciaaw.org/atomic-weights.htm Standard Atomic Weights 2013]. [[Commission on Isotopic Abundances and Atomic Weights]]</ref>
|electron configuration=[[[neon|Ne]]] 3s<sup>2</sup> 3p<sup>2</sup>
|electrons per shell=2, 8, 4
|color=
|phase=ku-thí
|phase comment=
|density gplstp=
|density gpcm3nrt=2.3290
|density gpcm3nrt 2=
|density gpcm3mp=2.57
|melting point K=1687
|melting point C=1414
|melting point F=2577
|boiling point K=3538
|boiling point C=3265
|boiling point F=5909
|triple point K=
|triple point kPa=
|critical point K=
|critical point MPa=
|heat fusion=50.21
|heat fusion 2=
|heat vaporization=383
|heat capacity=19.789
|vapor pressure 1=1908
|vapor pressure 10=2102
|vapor pressure 100=2339
|vapor pressure 1 k=2636
|vapor pressure 10 k=3021
|vapor pressure 100 k=3537
|vapor pressure comment=
|crystal structure=diamond cubic
|oxidation states='''4''', 3, 2, 1<ref>{{cite journal|author=Ram, R. S.|title=Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD|url=http://bernath.uwaterloo.ca/media/184.pdf |journal=J. Mol. Spectr. |volume=190|pages=341–352|year=1998|pmid=9668026|display-authors=etal}}</ref> −1, −2, −3, '''−4'''
|oxidation states comment=(an [[amphoterism|amphoteric]] oxide)
|electronegativity=1.90
|number of ionization energies=4
|ionization energy 1=786.5
|ionization energy 2=1577.1
|ionization energy 3=3231.6
|atomic radius=111
|atomic radius calculated=
|covalent radius=111
|Van der Waals radius=210
|magnetic ordering=[[Diamagnetism|diamagnetic]]
|magnetic ordering ref=<ref>[http://www-d0.fnal.gov/hardware/cal/lvps_info/engineering/elementmagn.pdf Magnetic susceptibility of the elements and inorganic compounds], in {{RubberBible86th}}</ref>
|electrical resistivity=
|electrical resistivity at 0=
|electrical resistivity at 20=2.3{{e|3}}
|electrical resistivity at 20 ref=<ref name="Eranna2014">{{cite book|author=Eranna, Golla |title=Crystal Growth and Evaluation of Silicon for VLSI and ULSI|url=http://books.google.com/books?id=bo6ZBQAAQBAJ&pg=PA7|date=2014|publisher=CRC Press|isbn=978-1-4822-3281-3|page=7}}</ref>
|thermal conductivity=149
|thermal conductivity 2=
|thermal diffusivity=
|thermal expansion=
|thermal expansion at 25=2.6
|speed of sound=
|speed of sound rod at 20=8433<!-- Source : Elastic Waves in Solids, by E. Dieulesaint and D. Royer -->
|speed of sound rod at r.t.=
|Young's modulus=130–188
|Young's modulus ref=<ref name=hopcroft>{{cite journal
|doi=10.1109/JMEMS.2009.2039697|title=What is the Young's Modulus of Silicon?
|year=2010
|last1=Hopcroft|first1=Matthew A.|last2=Nix|first2=William D.|last3=Kenny|first3=Thomas W.
|journal=Journal of Microelectromechanical Systems|volume=19|issue=2|pages=229
|url=http://silicon.reddogresearch.com/}}</ref>
|Shear modulus=51–80
|Shear modulus ref=<ref name=hopcroft/>
|Bulk modulus=97.6
|Bulk modulus ref=<ref name=hopcroft/>
|Poisson ratio=0.064–0.28
|Poisson ratio ref=<ref name=hopcroft/>
|Mohs hardness=7
|Vickers hardness=
|Brinell hardness=
|CAS number=7440-21-3
|band gap=1.12
|isotopes=
{{Infobox element/isotopes stable | mn=28 | sym=Si | na=92.23% | n=14 |firstlinks=yes}}
{{Infobox element/isotopes stable | mn=29 | sym=Si | na=4.67% | n=15 |firstlinks=no}}
{{Infobox element/isotopes stable | mn=30 | sym=Si | na=3.1% | n=16 |firstlinks=no}}
{{infobox element/isotopes decay | mn=32 | sym=Si | na=[[trace radioisotope|trace]] | hl=[[1 E9 s|153 y]] | dm=[[beta emission|β<sup>−</sup>]] | de=13.020 | link1=phosphorus-32 | pn=32 | ps=P }}
|isotopes comment=
|predicted by=[[Antoine Lavoisier]]
|prediction date=1787
|discovery and first isolation by=[[Jöns Jacob Berzelius]]<ref>{{cite journal|title=The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum|last=Weeks|first=Mary Elvira|authorlink=Mary Elvira Weeks|year=1932|journal=Journal of Chemical Education|volume=9|issue=8|pages=1386–1412|bibcode=1932JChEd...9.1386W |doi=10.1021/ed009p1386 }}</ref><ref>{{cite journal| year=2007| journal=Russian Journal of Applied Chemistry| doi=10.1134/S1070427207120397|title=Silicon era|last1=Voronkov|first1=M. G.|volume=80|page=2190| issue=12}}</ref>
|discovery date=1823
|naming=after Latin 'silex' or 'silicis', meaning [[flint]]
|named by= [[Thomas Thomson (chemist)|Thomas Thomson]]
|named date=1817
|history comment label=
|history comment=
}}
'''Si̍t ''' (矽) he yit-tsúng [[Fa-ho̍k]] [[Ngièn-su]], fa-ho̍k fù-ho vì '''Si''', ngièn-tsṳ́ su-muk he '''14''', tshai [[Ngièn-su Tsû-khì péu]] chûng thi sṳ̍p-si vi.
| |||